Characterization and Modeling I(V) of the Gate Schottky Structures HEMTs Ni/Au/AlInN/GaN

Abstract

In this paper, we have studied the Schottky contact of Ni/Au/AlInN/GaN HEMTs. The current–voltage Igs (Vgs) of Ni/Au/AlInN/GaN structures were investigated at room temperature. The electrical parameters such as ideality factor (2.3), barrier height (0.72 eV) and series resistance (33 W) were evaluated from I(V) data, the threshold voltage (-2.42 V), the 2D gas density (1.35 ´ 1013 cm-2) and barrier height (0.94 eV) were evaluated from C(V) data.

Keywords

• GaN
• AlInN
• Electrical characterization
• HEMT transistor.