Doping modulation of self-induced electric field (SIEF) in asymmetric GaAs/GaAlAs/GaAs quantum wells

Abstract

GaAs/GaAlAs/GaAs Asymmetric Quantum Wells (AQW) have shown in the past multiple advantages in the domain of inter-sub-band transition (ISBT) while serving as the basic structures for advanced electro-optical devices. A new approach enables to create and control the modulation of Self-Induced Electrical Fields (SIEF), as a function of the dopant concentration variation in the structure. Combined numerical and analytical analyses present a smart way to design such structures towards their future integration in advanced devices. The results are obtained by means of Comsol software which needed solid and creative adaptations in order to deal with this kind of challenging structure.

Keywords

• Asymmetric quantum well structure
• GaAs
• Self-induced electric field (SIEF)
• Doping modulation
• Schrödinger-poisson equation
• Numerical and analytical analyses