Two Dimensional β-InSe with Layer-Dependent Properties: Band Alignment, Work Function and Optical Properties
David K. Sang,
Huide Wang,
Meng Qiu,
Rui Cao,
Zhinan Guo,
Jinlai Zhao,
Yu Li,
Quanlan Xiao,
Dianyuan Fan,
Han Zhang
Affiliations
David K. Sang
Shenzhen Key Laboratory of Two Dimensional Materials and Devices, Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
Huide Wang
Shenzhen Key Laboratory of Two Dimensional Materials and Devices, Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
Meng Qiu
Shenzhen Key Laboratory of Two Dimensional Materials and Devices, Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
Rui Cao
Shenzhen Key Laboratory of Two Dimensional Materials and Devices, Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
Zhinan Guo
Shenzhen Key Laboratory of Two Dimensional Materials and Devices, Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
Jinlai Zhao
Shenzhen Key Laboratory of Two Dimensional Materials and Devices, Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
Yu Li
College of Materials Science and Engineering, Shenzhen University, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen 518060, China
Quanlan Xiao
Shenzhen Key Laboratory of Two Dimensional Materials and Devices, Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
Dianyuan Fan
Shenzhen Key Laboratory of Two Dimensional Materials and Devices, Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
Han Zhang
Shenzhen Key Laboratory of Two Dimensional Materials and Devices, Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
Density functional theory calculations of the layer (L)-dependent electronic band structure, work function and optical properties of β-InSe have been reported. Owing to the quantum size effects (QSEs) in β-InSe, the band structures exhibit direct-to-indirect transitions from bulk β-InSe to few-layer β-InSe. The work functions decrease monotonically from 5.22 eV (1 L) to 5.0 eV (6 L) and then remain constant at 4.99 eV for 7 L and 8 L and drop down to 4.77 eV (bulk β-InSe). For optical properties, the imaginary part of the dielectric function has a strong dependence on the thickness variation. Layer control in two-dimensional layered materials provides an effective strategy to modulate the layer-dependent properties which have potential applications in the next-generation high performance electronic and optoelectronic devices.
