Frattura ed Integrità Strutturale (Oct 2019)

Imaging performance of a CaWO4/CMOS sensor

  • Niki Martini,
  • Vaia Koukou,
  • George Fountos,
  • Ioannis Valais,
  • Ioannis Kandarakis,
  • Christos Michail,
  • Athanasios Bakas,
  • Eleftherios Lavdas,
  • Konstantinos Ninos,
  • Georgia Oikonomou,
  • Lida Gogou,
  • George Panayiotakis

DOI
https://doi.org/10.3221/IGF-ESIS.50.39
Journal volume & issue
Vol. 13, no. 50
pp. 471 – 480

Abstract

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The aim of this study was to investigate the modulation transfer function (MTF) and the effective gain transfer function (eGTF) of a non-destruc¬¬tive testing (NDT)/industrial inspection complementary metal oxide semi¬conductor (CMOS) sensor in conjunction with a thin calcium tungstate (CaWO4) screen. Thin screen samples, with dimensions of 2.7x3.6 cm2 and thick¬ness of 118.9 �m, estimated from scanning electron microscopy-SEM im¬ages, were extracted from an Agfa Curix universal screen and coupled to the active area of an active pixel (APS) CMOS sensor. MTF was assessed using the slanted-edge method, following the IEC 62220-1-1:2015 method. MTF values were found high across the examined spatial frequency range. eGTF was found maximum when CaWO4 was combined with charge-coupled devices (CCD) of broadband anti-reflection (AR) coating (17.52 at 0 cycles/mm). The com¬bi¬nation of the thin CaWO4 screen with the CMOS sensor provided very pro¬mis¬ing image resolution and adequate efficiency properties, thus could be also con¬sidered for use in CMOS based X-ray imaging devices, for various applications

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