Influence of reactive environment on the growth of graphene by CVD method

Abstract

Scalable graphene was grown on commercially purchased Cu foil by using the chemical vapor deposition method with a growth temperature and time of 900 °C and 30 min, respectively. The growth mechanism was investigated in a different reactive environment (gas flow). The crystallinity of the surface absorbed chemical species was identified through x-ray diffraction analysis. The structural morphology was determined by high-resolution transmission electron microscopy, scanning electron microscopy, and optical microscopy. Raman spectroscopy revealed the formation of defects in graphene under growth conditions. The growth environments of C2H4 and C2H2 result in higher defects than the CH4 state.