INFLUENCE OF IMPULSE PHOTON ANNEALING ON STRUCTURE AND PHASE COMPOSITION OF THIN-FILMED SYSTEMS ON BASIS OF SILICON AND TRANSITION METALS

Abstract

Methods of transmission electronic microscopy, electron diffraction, energy dispersive X-ray microanalysis have been used for investigations of element composition, regularities in structural and phase transmissions occurring in thin-filmed systems Si–Fe–Si and TiN–Ti–Si while using impulse photon annealing in terms of radiation energy density. Optimum parameters of impulse photon annealing for formation of β-FeSi2 and C54-TiSi2 thin films on silicon have been determined in the paper.