Wafer‐fused 1300 nm VCSELs with an active region based on superlattice

Abstract

Abstract The 1300 nm range vertical‐cavity surface‐emitting lasers with the active region based on InGaAs/InGaAlAs superlattice are fabricated using molecular‐beam epitaxy and the double wafer‐fusion technique. Lasers with the buried tunnel junction diameter of 5 μm have shown single‐mode CW operation with the output optical power of ∼6 mW at 20°C. Opened eye diagrams are observed up to 10 Gbps.

Keywords

• Lasing action in semiconductors
• Design of specific laser systems
• Laser resonators and cavities
• Vacuum deposition
• Vacuum deposition
• II-VI and III-V semiconductors