Structure and chemical composition of grain boundaries in the magnetic semiconductor GaSb<Mn>

Abstract

The structure and chemical composition of grain boundaries in GaSb magnetic semiconductors have been investigated. We determined that quenching of the GaSb melt with 2% Mn results in the formation of a textured polycrystal (111). The grain boundaries of the texture are formed by split 60 degree dislocations with dislocation lines. Microinclusions based on the ferromagnetic compound MnSb are located on the stacking faults of split dislocations. The chemical compositions of microinclusions differ, but their average composition is close to Mn1.1Sb. The synthesized GaSb is a soft ferromagnet with a coercive force of 10 Oe and a magnetic state approaching superparamagnetic

Keywords

• magnetic semiconductors
• gallium antimonide
• crystal lattice defects
• magnetic clusters