High-performance monolayer MoS2 photodetector enabled by oxide stress liner using scalable chemical vapor growth method
Li Zhiwen,
Wu Jing,
Wang Cong,
Zhang Han,
Yu Wenjie,
Lu Youming,
Liu Xinke
Affiliations
Li Zhiwen
College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Ave, Shenzhen 518060, PR China
Wu Jing
Institute of Materials Research and Engineering (IMRE), 2 Fusionopolis Way, Innovis, #08-03, 138634 Singapore, Singapore
Wang Cong
Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, PR China
Zhang Han
Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, PR China
Yu Wenjie
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Chang Ning Road, Shanghai 200050, PR China
Lu Youming
College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Ave, Shenzhen 518060, PR China
Liu Xinke
College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Ave, Shenzhen 518060, PR China
MoS2, as a typical representative of two-dimensional semiconductors, has been explored extensively in applications of optoelectronic devices because of its adjustable bandgap. However, to date, the performance of the fabricated photodetectors has been very sensitive to the surrounding environment owing to the large surface-to-volume ratio. In this work, we report on large-scale, high-performance monolayer MoS2 photodetectors covered with a 3-nm Al2O3 layer grown by atomic layer deposition. In comparison with the device without the Al2O3 stress liner, both the photocurrent and responsivity are improved by over 10 times under 460-nm light illumination, which is due to the tensile strain induced by the Al2O3 layer. Further characterization demonstrated state-of-the-art performance of the device with a responsivity of 16.103 A W−1, gain of 191.80, NEP of 7.96 × 10−15 W Hz−1/2, and detectivity of 2.73 × 1010 Jones. Meanwhile, the response rise time of the photodetector also reduced greatly because of the increased electron mobility and reduced surface defects due to the Al2O3 stress liner. Our results demonstrate the potential application of large-scale strained monolayer MoS2 photodetectors in next-generation imaging systems.
