CALCULATION OF GROWTH RATES AND COMPOSITIONS OF NANOLAYERS In_XGa_1-XAs ON A InP SUBSTRATE USING A 3D MODEL OF A HORIZONTAL MOVPE REACTOR

Abstract

A three-dimensional (3D) detailed heat, mass and momentum transfer model was constructed to describe the thermal behavior, fluid dynamics and the diffusion in a horizontal metal-organic vapor-phase epitaxy (MOVPE) reactor with a rectangular section and a rotated substrate keeper with inductive heating used for numerical studying to obtain optimum conditions for the growth process and to calculate the growth rate and the composition of In_xGa_1-xAs nanolayers.

Keywords

• rotating substrate keeper, horizontal reactor, mocvd, movpe, 3d model, numerical studying, in_xga_1-xas/inp, nanolayers.