Rydberg entangling gates in silicon

Abstract

In this paper we propose a Rydberg entangling gate scheme which we demonstrate theoretically to have an order-of-magnitude improvement in fidelities and speed over existing cold atom protocols. It requires a large Rabi frequency compared to the interaction strength, which is difficult in cold atoms, but natural in donors in silicon, where it could help overcome the strenuous requirements on atomic precision donor placement and substantial gate tuning, which so far has hampered scaling. Furthermore, the gate operation would be ultrafast, on the order of picoseconds. We calculate multivalley van der Waals, induced electric dipole and total Rydberg interactions for several donor species using the finite-element method and show that they are important even for low-lying excited states. We show that Rydberg gate operation is possible within the lifetime of donor excited states with 99.9% fidelity for the creation of a Bell state in the presence of decoherence.