Annealing effect on the structural and electrical performance of Mn-Co-Ni-O films
Fei Zhang,
Wei Zhou,
Cheng OuYang,
Jing Wu,
Yanqing Gao,
Zhiming Huang
Affiliations
Fei Zhang
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, People’s Republic of China
Wei Zhou
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, People’s Republic of China
Cheng OuYang
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, People’s Republic of China
Jing Wu
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, People’s Republic of China
Yanqing Gao
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, People’s Republic of China
Zhiming Huang
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, People’s Republic of China
Thin films of Mn1.95Co0.77Ni0.28O4are deposited on amorphous Al2O3 substrate by the magnetron sputtering method with the thickness of 6.5 μm. The effects of annealing treatment are studied on the film structural performance as well as the entropy of Mn-Co-Ni-O(MCNO) films by annealed at 400 ∘C, 500 ∘C, 600 ∘C, 700 ∘C, 800 ∘C respectively. It shows that the crystallinity of the thin film is the best annealed at 700 ∘C and the entropy is the largest because the number of different kinds of ions belonging to the same element equals with each other. After 800 ∘C annealing, the film resistivity is the minimal with the maximal entropy which means the highest stability.
