Annealing effect on the structural and electrical performance of Mn-Co-Ni-O films

Abstract

Thin films of Mn1.95Co0.77Ni0.28O4are deposited on amorphous Al2O3 substrate by the magnetron sputtering method with the thickness of 6.5 μm. The effects of annealing treatment are studied on the film structural performance as well as the entropy of Mn-Co-Ni-O(MCNO) films by annealed at 400 ∘C, 500 ∘C, 600 ∘C, 700 ∘C, 800 ∘C respectively. It shows that the crystallinity of the thin film is the best annealed at 700 ∘C and the entropy is the largest because the number of different kinds of ions belonging to the same element equals with each other. After 800 ∘C annealing, the film resistivity is the minimal with the maximal entropy which means the highest stability.