The Evaluation of Interface Quality in HfO<sub>2</sub> Films Probed by Time-Dependent Second-Harmonic Generation
Libo Zhang,
Li Ye,
Weiwei Zhao,
Chongji Huang,
Xue Liu,
Wenshuai Gao,
Tao Li,
Tai Min,
Jinbo Yang,
Mingliang Tian,
Xuegang Chen
Affiliations
Libo Zhang
Center of Free Electron Laser & High Magnetic Field, Leibniz International Joint Research Center of Materials Sciences of Anhui Province, Anhui University, Hefei 230601, China
Li Ye
Center of Free Electron Laser & High Magnetic Field, Leibniz International Joint Research Center of Materials Sciences of Anhui Province, Anhui University, Hefei 230601, China
Center of Free Electron Laser & High Magnetic Field, Leibniz International Joint Research Center of Materials Sciences of Anhui Province, Anhui University, Hefei 230601, China
Wenshuai Gao
Center of Free Electron Laser & High Magnetic Field, Leibniz International Joint Research Center of Materials Sciences of Anhui Province, Anhui University, Hefei 230601, China
Tao Li
Center for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, Department of Materials Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China
Tai Min
Center for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, Department of Materials Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China
Jinbo Yang
State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
Mingliang Tian
School of Physics and Optoelectronic Engineering, Anhui University, Hefei 230601, China
Xuegang Chen
Center of Free Electron Laser & High Magnetic Field, Leibniz International Joint Research Center of Materials Sciences of Anhui Province, Anhui University, Hefei 230601, China
Time-dependent second-harmonic generation (TD-SHG) is an emerging sensitive and fast method to qualitatively evaluate the interface quality of the oxide/Si heterostructures, which is closely related to the interfacial electric field. Here, the TD-SHG is used to explore the interface quality of atomic layer deposited HfO2 films on Si substrates. The critical SHG parameters, such as the initial SHG signal and characteristic time constant, are compared with the fixed charge density (Qox) and the interface state density (Dit) extracted from the conventional electrical characterization method. It reveals that the initial SHG signal linearly decreases with the increase in Qox, while Dit is linearly correlated to the characteristic time constant. It verifies that the TD-SHG is a sensitive and fast method, as well as simple and noncontact, for evaluating the interface quality of oxide/Si heterostructures, which may facilitate the in-line semiconductor test.
