Crystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprint

Jannatul Susoma; Jouko Lahtinen; Maria Kim; Juha Riikonen; Harri Lipsanen

doi:10.1063/1.4973918

AIP Advances (Jan 2017)

Crystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprint

Jannatul Susoma,
Jouko Lahtinen,
Maria Kim,
Juha Riikonen,
Harri Lipsanen

Affiliations

Jannatul Susoma: Department of Micro and Nanosciences, Aalto University, P.O. Box 13500 Aalto, FI-00076 Espoo, Finland
Jouko Lahtinen: Department of Applied Physics, Aalto University, P.O. Box 15100 Aalto, FI-00076 Espoo, Finland
Maria Kim: Department of Micro and Nanosciences, Aalto University, P.O. Box 13500 Aalto, FI-00076 Espoo, Finland
Juha Riikonen: Department of Micro and Nanosciences, Aalto University, P.O. Box 13500 Aalto, FI-00076 Espoo, Finland
Harri Lipsanen: Department of Micro and Nanosciences, Aalto University, P.O. Box 13500 Aalto, FI-00076 Espoo, Finland

DOI: https://doi.org/10.1063/1.4973918
Journal volume & issue: Vol. 7, no. 1
pp. 015014 – 015014-8

Abstract

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We have established Raman fingerprint of GaTe and GaSe to investigate their crystal quality. As unencapsulated, they both oxidise in ambient conditions which can be detected in their Raman analysis. X-ray photoelectron spectroscopy (XPS) analysis shows a good agreement with Raman analysis. 50-nm-thick Al2O3 encapsulation layer deposited by atomic layer deposition (ALD) inhibits degradation in ambient conditions.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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