The impact of delta-doping modulation and electric field influence within a nanostructure consisting of three GaAs quantum wells (QWs) separated by AlGaAs barriers was investigated. The quantized energy levels, Fermi energy, wavefunctions, self-consistent potential, and electron density distribution were evaluated by a self-consistent solution of the Schrödinger and Poisson equations using the finite element method within the FEniCS project in Python. The results indicate that increasing the electric field reduces energy levels and Fermi energy. In addition, the delta-doping position and electric field significantly affect the self-consistent potential and electron density distribution. This study provides a possibility to tailor optical properties, such as the linear absorption coefficient and photoluminescence, by adjusting geometrical and non-geometrical parameters, including donor density, enhancing the functionality of doped QWs in designing high electron mobility transistors.
