NANOSIZED STRUCTURES IN PbTe MATRIX WITH CdSe IMPURITIES

Abstract

In this work, electron microscopic studies of semiconductor compounds based on PbTe with impurities of dispersed CdSe phases have been carried out. As shown by the research results, in the initial undoped PbTe compound, the content of lead atoms is about 63,8 wt.%, and the tellurium content was 36,2 wt.%, i.e. corresponded to the stoichiometric composition. According to the electron microscope images, these components are evenly distributed over the area. The results of the study also showed that the formed new phases had grain sizes from 90 nm to 2 μm. The obtained values of the lattice parameter for the lead telluride compound and crystal system are in good agreement with the literature data. The structure of the resulting phases has the same symmetry as the initial undoped PbTe compound, a face-centered cubic lattice with the Fm3m symmetry class. In the molecules of the newly formed phases, in which the abundances of the elements Cd and Se prevailed, a change in the crystal lattice syngony was found.

Keywords

• lead telluride
• cadmium selenide
• nanoscale structures
• lattice parameter
• phase changes