Floating GaN whispering gallery mode micro-ring lasing with Burstein–Moss effect
Gangyi Zhu,
Ming Fang,
Siqing He,
Feifei Qin,
Xuelin Yang,
Yongjin Wang,
Chunxiang Xu
Affiliations
Gangyi Zhu
Peter Grünberg Research Centre, College of Telecommunications and Information Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China
Ming Fang
Peter Grünberg Research Centre, College of Telecommunications and Information Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China
Siqing He
Peter Grünberg Research Centre, College of Telecommunications and Information Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China
Feifei Qin
Peter Grünberg Research Centre, College of Telecommunications and Information Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China
Xuelin Yang
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
Yongjin Wang
Peter Grünberg Research Centre, College of Telecommunications and Information Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China
Chunxiang Xu
State Key Laboratory of Bioelectronics, Southeast University, Nanjing 210096, China
A floating GaN micro-ring is fabricated by standard semiconductor technology. Under pump power conditions, ultraviolet lasing with a quality factor of 3600 is obtained. Resonant mode analysis indicates that the lasing spectra contain two types of whispering gallery modes and one type of Fabry–Perót mode. With the increase in pumping power, the state filling induced Burstein–Moss effect is observed and understood through synchronous measurement of photoluminescence and time resolution photoluminescence spectra.
