The influence of the substrate temperature change character during the growth on the topology of the Ge/Si(100) film surface

Abstract

The possibility of roughness reducing of the Ge/Si (100) film using low-temperature layer of Ge (LT-Ge) has been investigated. It was shown that the substrate temperature change character during the growth process influences on the surface morphology of the grown Ge/LT-Ge/Si films. Samples were obtained by the method of molecular-beam epitaxy.

Keywords

• молекулярно-лучевая эпитаксия
• германий
• низкотемпературный слой
• атомно-силовая микроскопия