Large-Scale Green Method for Synthesizing Ultralong Uniform Tellurium Nanowires for Semiconductor Devices

Abstract

This study presents a large-scale green approach for synthesizing ultralong tellurium nanowires with diameters around 13 nm using a solution-based method. By adjusting key synthesis parameters such as the surfactant concentration, temperature, and reaction duration, we achieved high-quality, ultralong Te NWs. These nanowires exhibit properties suitable for use in semiconductor applications, particularly when employed as channel materials in thin-film transistors, displaying a pronounced gate effect with a high switch of up to 104 and a mobility of 0.9 cm2 V−1s−1. This study underscores the potential of solvent-based methods in synthesizing large-scale ultralong Te NWs as a critical resource for future sustainable nanoelectronic devices.

Keywords

• tellurium nanowires
• green synthesis
• semiconductor applications
• thin-film transistors
• large-scale