Power-cycling degradation monitoring of an IGBT module with VCE(sat) measurement in continuous operation of a chopper circuit

Abstract

This paper presents a power-cycling degradation monitoring method of an IGBT module with a VCE(sat) sensing circuit and junction temperature prediction by a three-dimensional structure model. A chopper circuit was introduced to provide a continuous-current-conducting operation of the IGBT module. The VCE(sat) sensing circuit with a low-cost IoT platform “Leafony” was utilized to monitor the junction temperature of an IGBT chip, which transferred the measured signal as digital data, and thus obtained a higher noise immunity than an analog-based circuit. The junction temperature of IGBT chip in the power module was analyzed from the dissipated power of IGBT and the transient thermal impedance between the chips and the ambient. This analysis is effective not only to observe the degradation but also to estimate the thermal resistance. Comparing the temperature profile between experiment and prediction provides health condition of the IGBT model.Predicted thermal profiles agreed with measured ones with 10 % increase of thermal resistance, which was degraded by a power cycle tester. From these results, the proposed monitoring method is effective to detect the progress of power cycle degradation.

Keywords

• IGBTs
• Condition monitoring
• Power cycle degradation, VCE(sat) measurement
• Temperature profile