Sensors (Jan 2024)
Quantum Efficiency Measurement and Modeling of Silicon Sensors Optimized for Soft X-ray Detection
- Maria Carulla,
- Rebecca Barten,
- Filippo Baruffaldi,
- Anna Bergamaschi,
- Giacomo Borghi,
- Maurizio Boscardin,
- Martin Brückner,
- Tim A. Butcher,
- Matteo Centis Vignali,
- Roberto Dinapoli,
- Simon Ebner,
- Francesco Ficorella,
- Erik Fröjdh,
- Dominic Greiffenberg,
- Omar Hammad Ali,
- Shqipe Hasanaj,
- Julian Heymes,
- Viktoria Hinger,
- Thomas King,
- Pawel Kozlowski,
- Carlos Lopez Cuenca,
- Davide Mezza,
- Konstantinos Moustakas,
- Aldo Mozzanica,
- Giovanni Paternoster,
- Kirsty A. Paton,
- Sabina Ronchin,
- Christian Ruder,
- Bernd Schmitt,
- Patrick Sieberer,
- Dhanya Thattil,
- Konrad Vogelsang,
- Xiangyu Xie,
- Jiaguo Zhang
Affiliations
- Maria Carulla
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland
- Rebecca Barten
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland
- Filippo Baruffaldi
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland
- Anna Bergamaschi
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland
- Giacomo Borghi
- Fondazione Bruno Kessler, Via Sommarive 18, 38126 Povo, Italy
- Maurizio Boscardin
- Fondazione Bruno Kessler, Via Sommarive 18, 38126 Povo, Italy
- Martin Brückner
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland
- Tim A. Butcher
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland
- Matteo Centis Vignali
- Fondazione Bruno Kessler, Via Sommarive 18, 38126 Povo, Italy
- Roberto Dinapoli
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland
- Simon Ebner
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland
- Francesco Ficorella
- Fondazione Bruno Kessler, Via Sommarive 18, 38126 Povo, Italy
- Erik Fröjdh
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland
- Dominic Greiffenberg
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland
- Omar Hammad Ali
- Fondazione Bruno Kessler, Via Sommarive 18, 38126 Povo, Italy
- Shqipe Hasanaj
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland
- Julian Heymes
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland
- Viktoria Hinger
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland
- Thomas King
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland
- Pawel Kozlowski
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland
- Carlos Lopez Cuenca
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland
- Davide Mezza
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland
- Konstantinos Moustakas
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland
- Aldo Mozzanica
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland
- Giovanni Paternoster
- Fondazione Bruno Kessler, Via Sommarive 18, 38126 Povo, Italy
- Kirsty A. Paton
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland
- Sabina Ronchin
- Fondazione Bruno Kessler, Via Sommarive 18, 38126 Povo, Italy
- Christian Ruder
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland
- Bernd Schmitt
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland
- Patrick Sieberer
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland
- Dhanya Thattil
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland
- Konrad Vogelsang
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland
- Xiangyu Xie
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland
- Jiaguo Zhang
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland
- DOI
- https://doi.org/10.3390/s24030942
- Journal volume & issue
-
Vol. 24,
no. 3
p. 942
Abstract
Hybrid pixel detectors have become indispensable at synchrotron and X-ray free-electron laser facilities thanks to their large dynamic range, high frame rate, low noise, and large area. However, at energies below 3 keV, the detector performance is often limited because of the poor quantum efficiency of the sensor and the difficulty in achieving single-photon resolution due to the low signal-to-noise ratio. In this paper, we address the quantum efficiency of silicon sensors by refining the design of the entrance window, mainly by passivating the silicon surface and optimizing the dopant profile of the n+ region. We present the measurement of the quantum efficiency in the soft X-ray energy range for silicon sensors with several process variations in the fabrication of planar sensors with thin entrance windows. The quantum efficiency for 250 eV photons is increased from almost 0.5% for a standard sensor to up to 62% as a consequence of these developments, comparable to the quantum efficiency of backside-illuminated scientific CMOS sensors. Finally, we discuss the influence of the various process parameters on quantum efficiency and present a strategy for further improvement.
Keywords
