RADIATION RESISTANCE OF SILICON NANOSTRUCTURED PHOTOVOLTAIC ELEMENTS FORMED IN COMPRESSION PLASMA

V. V. Uglov; N. T. Kvasov; V. M. Astashynski; Yu. A. Petukhou; A. M. Kuzmitski; I. L. Doroshevich; S. B. Lastovski

Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki (Jun 2019)

RADIATION RESISTANCE OF SILICON NANOSTRUCTURED PHOTOVOLTAIC ELEMENTS FORMED IN COMPRESSION PLASMA

V. V. Uglov,
N. T. Kvasov,
V. M. Astashynski,
Yu. A. Petukhou,
A. M. Kuzmitski,
I. L. Doroshevich,
S. B. Lastovski

Affiliations

V. V. Uglov: Белорусский государственный университет
N. T. Kvasov: Белорусский государственный университет информатики и радиоэлектроники
V. M. Astashynski: Институт физики им. Б.И. Степанова НАНБ
Yu. A. Petukhou: Белорусский государственный университет информатики и радиоэлектроники
A. M. Kuzmitski: Институт физики им. Б.И. Степанова НАНБ
I. L. Doroshevich: Белорусский государственный университет информатики и радиоэлектроники
S. B. Lastovski: Научно-практический центр НАНБ по материаловедению, Минск, Беларусь

Journal volume & issue: Vol. 0, no. 2
pp. 21 – 25

Abstract

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Photovoltaic effect in silicon doped by the action of compression plasma pulses is investigated for the first time. Plasma treatment parameters providing maximum values of photo-emf are optimized. Dependences of photo-emf on the dose of electron high-energy post-irradiation are studied.

Published in Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki

ISSN: 1729-7648 (Print)
Publisher: Educational institution «Belarusian State University of Informatics and Radioelectronics»
Country of publisher: Belarus
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Electronics
Website: https://doklady.bsuir.by/

About the journal

Abstract

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