High Responsivity and Ultra-Low Detection Limits in Nonlinear a-Si:H p-i-n Photodiodes Enabled by Photogating

Abstract

Abstract Photodetectors operating at the wavelength in the visible spectrum are key components in high-performance optoelectronic systems. In this work, massive nonlinearities in amorphous silicon p-i-n photodiodes enabled by the photogating are presented, resulting in responsivities up to 744 mA/W at blue wavelengths. The detectors exhibit significant responsivity gains at optical modulation frequencies exceeding MHz and a more than 60-fold enhanced spectral response compared to the non-gated state. The detection limits down to 10.4 nW/mm2 and mean signal-to-noise ratio enhancements of 8.5 dB are demonstrated by illuminating the sensor with an additional 6.6 µW/mm2 red wavelength. Electro-optical simulations verify photocarrier modulation due to defect-induced field screening to be the origin of such high responsivity gains. The experimental results validate the theory and enable the development of commercially viable and complementary metal oxide semiconductor (CMOS) compatible high responsivity photodetectors operating in the visible range for low-light level imaging and detection.

Keywords

• Photogating
• amorphous silicon a-Si:H
• nonlinearity
• photodetector
• responsivity gain