Towards wake-up free ferroelectrics and scaling: Al-doped HZO and its crystallographic texture

Ayse Sünbül; David Lehninger; Amir Pourjafar; Shouzhuo Yang; Franz Müller; Ricardo Olivo; Thomas Kämpfe; Konrad Seidel; Lukas Eng; Maximilian Lederer

Memories - Materials, Devices, Circuits and Systems (Aug 2024)

Towards wake-up free ferroelectrics and scaling: Al-doped HZO and its crystallographic texture

Ayse Sünbül,
David Lehninger,
Amir Pourjafar,
Shouzhuo Yang,
Franz Müller,
Ricardo Olivo,
Thomas Kämpfe,
Konrad Seidel,
Lukas Eng,
Maximilian Lederer

Affiliations

Ayse Sünbül: Fraunhofer Institute for Photonic Microsystems IPMS, Center Nanoelectronic Technologies CNT, An der Bartlake 5, Dresden, 01109, Saxony, Germany; Corresponding author.
David Lehninger: Fraunhofer Institute for Photonic Microsystems IPMS, Center Nanoelectronic Technologies CNT, An der Bartlake 5, Dresden, 01109, Saxony, Germany
Amir Pourjafar: Fraunhofer Institute for Photonic Microsystems IPMS, Center Nanoelectronic Technologies CNT, An der Bartlake 5, Dresden, 01109, Saxony, Germany
Shouzhuo Yang: Fraunhofer Institute for Photonic Microsystems IPMS, Center Nanoelectronic Technologies CNT, An der Bartlake 5, Dresden, 01109, Saxony, Germany
Franz Müller: Fraunhofer Institute for Photonic Microsystems IPMS, Center Nanoelectronic Technologies CNT, An der Bartlake 5, Dresden, 01109, Saxony, Germany
Ricardo Olivo: Fraunhofer Institute for Photonic Microsystems IPMS, Center Nanoelectronic Technologies CNT, An der Bartlake 5, Dresden, 01109, Saxony, Germany
Thomas Kämpfe: Fraunhofer Institute for Photonic Microsystems IPMS, Center Nanoelectronic Technologies CNT, An der Bartlake 5, Dresden, 01109, Saxony, Germany
Konrad Seidel: Fraunhofer Institute for Photonic Microsystems IPMS, Center Nanoelectronic Technologies CNT, An der Bartlake 5, Dresden, 01109, Saxony, Germany
Lukas Eng: Institute of Applied Physics, Technical University of Dresden, Noethnitzer Str. 61, Dresden, 01187, Saxony, Germany
Maximilian Lederer: Fraunhofer Institute for Photonic Microsystems IPMS, Center Nanoelectronic Technologies CNT, An der Bartlake 5, Dresden, 01109, Saxony, Germany

Journal volume & issue: Vol. 8
p. 100110

Abstract

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Ferroelectric (FE) hafnium zirconium oxide (HZO) is an excellent candidate for data storage applications. However, it has some reliability limitations such as imprint and retention. Herein, we explore Al doping of HZO to overcome these limitations. FE behavior is tuned by the aluminum (Al) concentrations in the films and by annealing temperature. A correlation is done between electrical behavior, crystallographic texture, and FE phases determined by grazing-incidence X-ray diffraction (GIXRD) measurements. Reduced coercive field (2Ec) values and wake-up free HZO-based ferroelectrics are explored. We show the tunability of remanent polarization (2Pr) and 2Ec with respect to Al-doping concentration and anneal temperature, hence crystallographic texture.

Published in Memories - Materials, Devices, Circuits and Systems

ISSN: 2773-0646 (Online)
Publisher: Elsevier
Country of publisher: United Kingdom
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Electric apparatus and materials. Electric circuits. Electric networks; Technology: Electrical engineering. Electronics. Nuclear engineering: Electronics: Computer engineering. Computer hardware
Website: https://www.sciencedirect.com/journal/memories-materials-devices-circuits-and-systems

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