Modulation of the carrier balance of lead-halide perovskite nanocrystals by polyelectrolyte hole transport layers for near-infrared light-emitting diodes
Chih-Chien Lee,
Johan Iskandar,
Ade Kurniawan,
Hung-Pin Hsu,
Ya-Fen Wu,
Hsin-Ming Cheng,
Shun-Wei Liu
Affiliations
Chih-Chien Lee
Department of Electronic Engineering National Taiwan University of Science and Technology, Taipei City 106335, Taiwan
Johan Iskandar
Department of Electronic Engineering National Taiwan University of Science and Technology, Taipei City 106335, Taiwan; Organic Electronics Research Center, Ming Chi University of Technology, New Taipei City 243303, Taiwan
Ade Kurniawan
Department of Electronic Engineering National Taiwan University of Science and Technology, Taipei City 106335, Taiwan; Organic Electronics Research Center, Ming Chi University of Technology, New Taipei City 243303, Taiwan
Hung-Pin Hsu
Department of Electronic Engineering, Ming Chi University of Technology, New Taipei City 243303, Taiwan; Organic Electronics Research Center, Ming Chi University of Technology, New Taipei City 243303, Taiwan
Ya-Fen Wu
Department of Electronic Engineering, Ming Chi University of Technology, New Taipei City 243303, Taiwan; Organic Electronics Research Center, Ming Chi University of Technology, New Taipei City 243303, Taiwan
Hsin-Ming Cheng
Department of Electronic Engineering, Ming Chi University of Technology, New Taipei City 243303, Taiwan; Organic Electronics Research Center, Ming Chi University of Technology, New Taipei City 243303, Taiwan; Corresponding author.
Shun-Wei Liu
Department of Electronic Engineering, Ming Chi University of Technology, New Taipei City 243303, Taiwan; Organic Electronics Research Center, Ming Chi University of Technology, New Taipei City 243303, Taiwan; Corresponding author.
An alternative material, methylamine (MA)-doped poly[3-(4-carboxymethyl)thiophene-2,5-diyl] (P3CT) as hole transport layer (HTL) was investigated for efficient solution-processed near-infrared perovskite light-emitting diodes (NIR PeLEDs). The best NIR PeLEDs performance was achieved with an optimized composition ratio of the MA-doped P3CT (1:1) due to the balance of the electron and hole carrier in the active layer. The charge-balanced NIR PeLEDs exhibit the highest radiance of 858.37 W sr−1 m−2, a low turn-on voltage of 1.82 V, and an external quantum efficiency of 7.44%. Our findings show that using P3CT as an alternative HTL has the potential to significantly improve PeLED performance, allowing it to play a role in the development of practical applications in high-power NIR LEDs.
