Nanophotonics (Aug 2018)

Solar-blind ultraviolet photodetector based on graphene/vertical Ga2O3 nanowire array heterojunction

  • He Tao,
  • Zhao Yukun,
  • Zhang Xiaodong,
  • Lin Wenkui,
  • Fu Kai,
  • Sun Chi,
  • Shi Fengfeng,
  • Ding Xiaoyu,
  • Yu Guohao,
  • Zhang Kai,
  • Lu Shulong,
  • Zhang Xinping,
  • Zhang Baoshun

DOI
https://doi.org/10.1515/nanoph-2018-0061
Journal volume & issue
Vol. 7, no. 9
pp. 1557 – 1562

Abstract

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In this paper, a solar-blind ultraviolet photodetector (PD) based on the graphene/vertical Ga2O3 nanowire array heterojunction was proposed and demonstrated. To the best of our knowledge, it is the first time that vertical Ga2O3 nanowire arrays have been realized. Ga2O3 nanowires were obtained by thermally oxidizing GaN nanowires grown by molecular beam epitaxy on n-doped Si substrate. Then, a monolayer graphene film was transferred to Ga2O3 nanowires to form the graphene/vertical Ga2O3 nanowire array heterojunction and transparent electrodes. The fabricated device exhibited a responsivity (R) of 0.185 A/W and rejection ratio (R258 nm/R365 nm) of 3×104 at the bias of −5 V. Moreover, the fast response times of this PD were 9 and 8 ms for the rise and decay times under 254 nm illumination, respectively, which are attributed to the unique properties of nanowire arrays and the graphene/vertical Ga2O3 nanowire array heterojunction structure.

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