Sb2Te3/MoS2 Van der Waals Junctions with High Thermal Stability and Low Contact Resistance

Abstract

Abstract Two‐dimensional transition metal dichalcogenides (TMDCs) demonstrate great potential in nanoelectronics devices owing to their high carrier mobility in the atomically thin channel regime. However, high contact resistance between source/drain electrodes and TMDC channels hinders the TMDCs applications in the very‐large‐scale integration (VLSI) field. Here, this work reports atomically aligned van der Waals (vdW) junction fabrications through thermal‐induced crystallization of layered Sb2Te3 electrodes on monolayer MoS2 using VLSI‐compatible physical vapor deposition and annealing processes. Due to Fermi‐level unpinning with a small band offset between Sb2Te3 and MoS2 and small density of state of Sb2Te3, better device performance is demonstrated on MoS2 MOSFETs with Sb2Te3/W contact than that of Sb/W contact. Moreover, the ideal vdW junctions are found to demonstrate extreme high‐thermal robustness. No intermixing at the Sb2Te3/MoS2 interface or crystallinity degradation of Sb2Te3 is observed after 450 °C annealing, leading to higher thermal stability than its Sb counterpart. Sb2Te3 is a promising candidate as an n‐type contact material for TMDC‐based devices such as MoS2, MoSe2, and WS2 in future VLSI electronics and various other applications.

Keywords

• antimony telluride
• field‐effect transistors
• molybdenum disulfide
• transition metal dichalcogenides
• van der Waals junction