Amorphous SiC Thin Films Deposited by Plasma-Enhanced Chemical Vapor Deposition for Passivation in Biomedical Devices
Scott Greenhorn,
Edwige Bano,
Valérie Stambouli,
Konstantinos Zekentes
Affiliations
Scott Greenhorn
The Institute of Electronic Structure and Laser of the Foundation for Research and Technology-Hellas (MRG-IESL/FORTH), GR-70013 Heraklion, Greece
Edwige Bano
Centre de Radiofréquences, Optique et Micro-nanoélectronique des Alpes, Université Grenoble Alpes, Centre National de la Recherche Scientifique, Institut Polytechnique de Grenoble, 38016 Grenoble, France
Valérie Stambouli
Laboratoire des Matériaux et de la Génie Physique, Université Grenoble Alpes, Centre National de la Recherche Scientifique, Institut Polytechnique de Grenoble, 38016 Grenoble, France
Konstantinos Zekentes
The Institute of Electronic Structure and Laser of the Foundation for Research and Technology-Hellas (MRG-IESL/FORTH), GR-70013 Heraklion, Greece
Amorphous silicon carbide (a-SiC) is a wide-bandgap semiconductor with high robustness and biocompatibility, making it a promising material for applications in biomedical device passivation. a-SiC thin film deposition has been a subject of research for several decades with a variety of approaches investigated to achieve optimal properties for multiple applications, with an emphasis on properties relevant to biomedical devices in the past decade. This review summarizes the results of many optimization studies, identifying strategies that have been used to achieve desirable film properties and discussing the proposed physical interpretations. In addition, divergent results from studies are contrasted, with attempts to reconcile the results, while areas of uncertainty are highlighted.
