Sensitive control of broad-area semiconductor lasers by cavity shape
Kyungduk Kim,
Stefan Bittner,
Yuhao Jin,
Yongquan Zeng,
Stefano Guazzotti,
Ortwin Hess,
Qi Jie Wang,
Hui Cao
Affiliations
Kyungduk Kim
Department of Applied Physics, Yale University, New Haven, Connecticut 06520, USA
Stefan Bittner
Chair in Photonics, LMOPS EA-4423 Laboratory, CentraleSupélec and Université de Lorraine, Metz 57070, France
Yuhao Jin
Center for OptoElectronics and Biophotonics, School of Electrical and Electronic Engineering, School of Physical and Mathematical Science, and Photonics Institute, Nanyang Technological University, 639798, Singapore
Yongquan Zeng
Center for OptoElectronics and Biophotonics, School of Electrical and Electronic Engineering, School of Physical and Mathematical Science, and Photonics Institute, Nanyang Technological University, 639798, Singapore
Stefano Guazzotti
School of Physics and CRANN Institute, Trinity College Dublin, Dublin 2, Ireland
Ortwin Hess
School of Physics and CRANN Institute, Trinity College Dublin, Dublin 2, Ireland
Qi Jie Wang
Center for OptoElectronics and Biophotonics, School of Electrical and Electronic Engineering, School of Physical and Mathematical Science, and Photonics Institute, Nanyang Technological University, 639798, Singapore
Hui Cao
Department of Applied Physics, Yale University, New Haven, Connecticut 06520, USA
The ray dynamics of optical cavities exhibits bifurcation points: special geometries at which ray trajectories switch abruptly between stable and unstable. A prominent example is the Fabry–Perot cavity with two planar mirrors, which is widely employed for broad-area semiconductor lasers. Such cavities support lasing in a relatively small number of transverse modes, and the laser is highly susceptible to filamentation and irregular pulsations. Here, we demonstrate experimentally that a slight deviation from this bifurcation point (planar cavity) dramatically changes the laser performance. In a near-planar cavity with two concave mirrors, the number of transverse lasing modes increases drastically. While the spatial coherence of the laser emission is reduced, the divergence angle of the output beam remains relatively narrow. Moreover, the spatiotemporal lasing dynamics becomes significantly more stable compared to that in a Fabry–Perot cavity. Our near-planar broad-area semiconductor laser has higher brightness, better directionality, and hence allows shorter integration times than an incandescent lamp while featuring sufficiently low speckle contrast at the same time, making it a vastly superior light source for speckle-free imaging. Furthermore, our method of controlling spatiotemporal dynamics with extreme sensitivity near a bifurcation point may be applied to other types of high-power lasers and nonlinear dynamic systems.