Fabricating programmed micro-defects on a line and space pattern with an ultra-low line edge roughness <1 nm

Abstract

Standard samples with programmed micro-defects were fabricated for evaluating the defect detection capability of the next generation of pattern inspection tools. A 1.5-nm protrusion programmed defect and a 4-nm-wide (< 1 nm in the center) bridge defect were successfully fabricated on a line and space pattern with the large line edge roughness reduced to almost zero. The side wall of the line and space pattern and the bridge defect were surrounded by {111} crystalline planes. We applied our developed algorithm to the captured scanning electron microscope images to demonstrate offline pattern inspection. The inspection results indicate that the standard samples will be very effective in evaluating the performance of the next generation of inspection tools, including their defect detection capability and throughput. Keywords: Standard sample, Programmed defect, Defect inspection, Line edge roughness, Anisotropic wet etching, (110) silicon