Signatures of self-interstitials in laser-melted and regrown silicon

Abstract

Photoluminescence spectroscopy investigates epitaxially regrown silicon single crystals after pulsed laser melting for atomic-level lattice defects. The measurements identify a transition from a regime free of defect-related spectral lines to a regime in which spectral lines appear originating from small self-interstitial clusters. This finding of self-interstitial clusters indicates supersaturated concentrations of self-interstitials within the regrown volume. Molecular dynamics simulations confirm that recrystallization velocities vre ≈ 1 m/s after laser melting lead to supersaturation of both self-interstitials and vacancies. Their concentrations ci and cv in the regrown volumes are ci ≈ cv ≈ 1017 cm−3. An analytical model based on time-dependent nucleation theory shows a very strong dependence of self-interstitial aggregation to clusters on the cooling rate after solidification. This model explains the transition identified by photoluminescence spectroscopy.