Thermal oxidation of lattice mismatched Al1-xInxN films on GaN

Abstract

Lattice-mismatched Al1-xInxN layers grown on GaN and with varying x are thermally oxidized to understand how alloy content affects the oxidation process and oxide films. The samples are oxidized in a horizontal tube furnace at 830 oC and 900 oC for 2 h under O2. The samples are characterized using atomic force microscopy to determine root mean square roughness before and after oxidation. The oxide thickness for each sample is determined by spectroscopic ellipsometry. The AlInN layers with less indium produce smoother oxide layers, and the oxidation rate of the samples increases with increasing indium content. Energy dispersive X-ray spectroscopy of scanning transmission electron microscopy images of the oxide layers show the In collects on or near the surface of the oxide layer. Overall, the results indicate that oxides formed from AlInN layers with less indium produce smoother oxide films and are more suitable for device applications.

Keywords

• Oxidation
• Wide bandgap semiconductors
• Gallium nitride, GaN, Aluminum indium nitride, AlInN