Sensors (Jul 2023)

A Wideband True Time Delay Circuit Using 0.25 µm GaN HEMT Technology

  • Jeong-Geun Kim,
  • Donghyun Baek

DOI
https://doi.org/10.3390/s23156827
Journal volume & issue
Vol. 23, no. 15
p. 6827

Abstract

Read online

This paper presents a wideband 4-bit true time delay IC using a 0.25 μm GaN HEMT (High-Electron-Mobility Transistor) process for the beam-squint-free phased array antennas. The true time delay IC is implemented with a switched path circuit topology using DPDT (Double Pole Double Throw) with no shunt transistor in the inter-stages to improve the bandwidth and SPDT (Single Pole Single Throw) switches at the input and the output ports. The delay lines are implemented with CLC π-networks with the lumped element to ensure a compact chip size. A negative voltage generator and an SPI controller are implemented in the PCB (Printed Circuit Board) due to the lack of digital control logic in GaN technology. A maximum time delay of ~182 ps with a time delay resolution of 10.5 ps is achieved at DC–6 GHz. The RMS (Root Mean Square) time delay and amplitude error are 10 dB at DC–6 GHz. The current consumption is nearly zero with a 3.3 V supply. The chip size including pads is 2.45 × 1.75 mm2. To the authors’ knowledge, this is the first demonstration of a true time delay IC using GaN HEMT technology.

Keywords