Transferable Substrateless GaN LED Chips Produced by Femtosecond Laser Lift-Off for Flexible Sensor Applications
Nursidik Yulianto,
Steffen Bornemann,
Lars Daul,
Christoph Margenfeld,
Irene Manglano Clavero,
Nurhalis Majid,
Ludger Koenders,
Winfried Daum,
Andreas Waag,
Hutomo Suryo Wasisto
Affiliations
Nursidik Yulianto
Institute of SemiconductorTechnology (IHT) and Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, 38106 Braunschweig, Germany
Steffen Bornemann
Institute of SemiconductorTechnology (IHT) and Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, 38106 Braunschweig, Germany
Lars Daul
Department 5.1 Surface Metrology, Physikalisch-Technische Bundesanstalt (PTB), 38116 Braunschweig, Germany
Christoph Margenfeld
Institute of SemiconductorTechnology (IHT) and Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, 38106 Braunschweig, Germany
Irene Manglano Clavero
Institute of SemiconductorTechnology (IHT) and Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, 38106 Braunschweig, Germany
Nurhalis Majid
Research Center for Physics, Indonesian Institute of Sciences (LIPI), 15314 Tangerang Selatan, Indonesia
Ludger Koenders
Department 5.1 Surface Metrology, Physikalisch-Technische Bundesanstalt (PTB), 38116 Braunschweig, Germany
Winfried Daum
Institute of Energy Research and Physical Technologies, Technische Universität Clausthal, 38678 Clausthal-Zellerfeld, Germany
Andreas Waag
Institute of SemiconductorTechnology (IHT) and Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, 38106 Braunschweig, Germany
Hutomo Suryo Wasisto
Institute of SemiconductorTechnology (IHT) and Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, 38106 Braunschweig, Germany
Transferable substrate-less InGaN/GaN light-emitting diode (LED) chips have successfully been fabricated in a laser lift-off (LLO) process employing high power ultrashort laser pulses with a wavelength of 520 nm. The irradiation of the sample was conducted in two sequential steps involving high and low pulse energies from the backside of the sapphire substrate, which led to self-detachment of the GaN stack layer without any additional tape release procedure. To guarantee their optoelectrical function and surface quality, the lifted LED chips were assessed in scanning electron microscopy (SEM) and electroluminescence (EL) measurements. Moreover, surface characterizations were done using atomic force microscopy (AFM) and Auger Electron Spectroscopy (AES).
