Design of 960~1 400 MHz broadband power amplifier

Abstract

Based on laterally diffused metal-oxide-semiconductor (LDMOS) devices, a broadband RF power amplifier for L-band was developed. The amplifier is composed of two stages of amplification and cascade connection. In order to achieve broadband and good output standing wave, the final stage power amplifier adopts a balanced topology circuit structure; the inter-stage matching network uses the microstrip line and capacitor hybrid matching method to achieve broadband matching. The final measured data are as follows: the frequency covers 0.96 GHz~1.4 GHz, the overall output power of the power amplifier reaches 50 dBm (100 W), the power gain is greater than 30 dB, and the efficiency is greater than 45%. The power backoff is 8 dB, and when the output power is 42 dBm, the adjacent channel power ratio (ACPR) is -40 dBC. The indicators show that the power amplifier module can be well used in radar and wireless communication transmitters.

Keywords

• laterally diffused metal oxide semiconductor
• l-band
• broadband
• cascade