npj Quantum Materials (Dec 2024)

Topological phase transition in quasi-one-dimensional bismuth iodide Bi4I4

  • W. X. Zhao,
  • M. Yang,
  • X. Du,
  • Y. D. Li,
  • K. Y. Zhai,
  • Y. Q. Hu,
  • J. F. Han,
  • Y. Huang,
  • Z. K. Liu,
  • Y. G. Yao,
  • J. C. Zhuang,
  • Y. Du,
  • J. J. Zhou,
  • Y. L. Chen,
  • L. X. Yang

DOI
https://doi.org/10.1038/s41535-024-00711-w
Journal volume & issue
Vol. 9, no. 1
pp. 1 – 7

Abstract

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Abstract Quasi-one-dimensional (quasi-1D) bismuth iodide Bi4I4 exhibits versatile topological phases of matter including weak topological insulator (WTI) and higher-order topological insulator (HOTI) phases with high tunability in response to external parameters. In this work, performing laser-based angle-resolved photoemission spectroscopy with submicron spatial resolution (micro-ARPES), we reveal the presence of an energy gap on the (100) surface of the low-temperature α-Bi4I4, providing spectroscopic evidence for the HOTI phase. Conversely, the high-temperature β-Bi4I4 harbors gapless Dirac fermions on the (100) surface alongside gapped states on the (001) surface, thereby establishing a WTI phase. By tracking the temperature evolution of the (100) surface states, we unveil a thermal hysteresis of the surface gap in line with the α-β structural phase transition. Our findings directly evidence a temperature-induced topological phase transition from WTI to HOTI in Bi4I4, which paves the way to its potential applications at room temperature.