Numerical Optimization of Gradient Bandgap Structure for CIGS Solar Cell with ZnS Buffer Layer Using Technology Computer-Aided Design Simulation

Abstract

The band structure characteristics of a copper indium gallium sulfur selenide (Cu(In1–xGax)SeS, CIGS) solar cell incorporating a cadmium-free zinc sulfide (ZnS) buffer layer were investigated using technology computer-aided design simulations. Considering the optical/electrical properties that depend on the Ga content, we numerically demonstrated that the front gradient bandgap enhanced the electron movement over the band-offset of the ZnS interface barrier, and the back gradient bandgap generated a back side field, improving electron transport in the CIGS layer; in addition, the short circuit current density (JSC) and open circuit voltage (VOC) improved. The simulation demonstrated that the conversion efficiency of a double graded bandgap cell is higher than with uniform or normal/reverse gradient cells, and VOC strongly correlated with the average bandgap in the space charge region (SCR) of CIGS. After selecting VOC from the SCR, we optimized the band structure of the CIGS cell with a Cd-free ZnS buffer by evaluating JSC and the fill factor. We demonstrated that the cell efficiency of the fabricated cell was more than 15%, which agrees well with the simulated results. Our numerical method can be used to design high-conversion efficiency CIGS cells with a gradient band structure and Cd-free buffer layer.

Keywords

• CIGS (copper indium gallium selenide)
• band structure
• double graded bandgap
• TCAD (technology computer-aided design) simulation
• carrier transportation