CMOS Pixel Spectroscopic Circuits for Cd(Zn)Te Gamma Ray Imagers

Abstract

A family of 2-D pixel CMOS ASICs have been developed to be used as readout electronics of gamma ray imaging instruments based on hybrid pixel sensor arrays. One element of the sensor array consists of a pixilated single crystal of CdTe or CdZnTe semiconductor bump bonded to the CMOS electronic circuit. The first member of the family can process single photon signals which deliver up to 4fCb charge, while the two other can process signals up to 36fCb. A unique readout mode and the simultaneous extraction of energy and time tagging information of the converted photons differentiate the members of this family from other existing CMOS readout circuits.