Nature Communications (May 2017)

Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility

  • K. Olejník,
  • V. Schuler,
  • X. Marti,
  • V. Novák,
  • Z. Kašpar,
  • P. Wadley,
  • R. P. Campion,
  • K. W. Edmonds,
  • B. L. Gallagher,
  • J. Garces,
  • M. Baumgartner,
  • P. Gambardella,
  • T. Jungwirth

DOI
https://doi.org/10.1038/ncomms15434
Journal volume & issue
Vol. 8, no. 1
pp. 1 – 7

Abstract

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Devices based on antiferromagnetic materials have advantages of robustness to external magnetic fields and the potential for ultrafast operation. Here the authors present a multilevel antiferromagnetic memory cell that can be operated using standard electronic interfaces.