The 100 W class A power amplifier for L-band T/R module

Abstract

In the paper a balanced high power amplifier with class A silicon bipolar transistors for L-band T/R module is described. The amplifier was designed for maximum power and minimum transmitance distortions. The obtained parameters of the amplifier are as follow: output power at 1 dB compression P1 dB > 49 dBm, linear gain |S21| > 10 dB, and transmitance deviations during the RF pulse: phase arg(S21)<0.90 and Pout<0.2 dB.

Keywords

• modeling
• MESFETs
• finite difference time domain method
• power transistors
• microwave transistors