Emerging two‐dimensional bismuth oxychalcogenides for electronics and optoelectronics
Fakun Wang,
Sijie Yang,
Jie Wu,
Xiaozong Hu,
Yuan Li,
Huiqiao Li,
Xitao Liu,
Junhua Luo,
Tianyou Zhai
Affiliations
Fakun Wang
State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering Huazhong University of Science and Technology Wuhan People's Republic of China
Sijie Yang
State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering Huazhong University of Science and Technology Wuhan People's Republic of China
Jie Wu
State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering Huazhong University of Science and Technology Wuhan People's Republic of China
Xiaozong Hu
Green Catalysis Center, and College of Chemistry Zhengzhou University Zhengzhou People's Republic of China
Yuan Li
State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering Huazhong University of Science and Technology Wuhan People's Republic of China
Huiqiao Li
State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering Huazhong University of Science and Technology Wuhan People's Republic of China
Xitao Liu
State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou People's Republic of China
Junhua Luo
State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou People's Republic of China
Tianyou Zhai
State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering Huazhong University of Science and Technology Wuhan People's Republic of China
Abstract Atomically thin two‐dimensional (2D) bismuth oxychalcogenides (Bi2O2X, X = S, Se, Te) have recently attracted extensive attention in the material research community due to their unique structure, outstanding long‐term ambient stability, and high carrier mobility, which enable them as promising candidates for high‐performance electronic and optoelectronic applications. Herein, we present a comprehensive review on the recent advances of 2D bismuth oxychalcogenides research. We start with an introduction of their fundamental properties including crystal structure and electronic band structure. Next, we summarize the common techniques for synthesizing these 2D structures with high crystallinity and large lateral size. Furthermore, we elaborate on their device applications including transistors, artificial synapses, optical switch and photodetectors. The last but not the least, we summarize the existing challenges and prospects for this emerging 2D bismuth oxychalcogenides field.
