Reconfigurable Single-Layer Graphene Radio Frequency Antenna Device Capable of Changing Resonant Frequency
Hyeon Jun Hwang,
So-Young Kim,
Sang Kyung Lee,
Byoung Hun Lee
Affiliations
Hyeon Jun Hwang
Center for Semiconductor Technology Convergence, Department of Electrical Engineering, Pohang University of Science and Technology, Cheongam-ro 77, Nam-gu, Pohang 37673, Gyeongbuk, Republic of Korea
So-Young Kim
Center for Semiconductor Technology Convergence, Department of Electrical Engineering, Pohang University of Science and Technology, Cheongam-ro 77, Nam-gu, Pohang 37673, Gyeongbuk, Republic of Korea
Sang Kyung Lee
Alphagraphene Inc. 77, Cheongam-ro, Nam-gu, Pohang 37673, Gyeongbuk, Republic of Korea
Byoung Hun Lee
Center for Semiconductor Technology Convergence, Department of Electrical Engineering, Pohang University of Science and Technology, Cheongam-ro 77, Nam-gu, Pohang 37673, Gyeongbuk, Republic of Korea
A reconfigurable passive device that can manipulate its resonant frequency by controlling its quantum capacitance value without requiring complicated equipment has been experimentally investigated by modifying the Fermi level of large-area graphene using an external electric field. When the total capacitance change, caused by the gate bias in the passive graphene device, was increased to 60% compared to the initial state, a 6% shift in the resonant frequency could be achieved. While the signal characteristics of the graphene antenna are somewhat inferior compared to the conventional metal antenna, simplifying the device structure allowed reconfigurable characteristics to be implemented by using only the gate bias change.