Nanocrystalline ZnSnN<sub>2</sub> Prepared by Reactive Sputtering, Its Schottky Diodes and Heterojunction Solar Cells
Fan Ye,
Rui-Tuo Hong,
Yi-Bin Qiu,
Yi-Zhu Xie,
Dong-Ping Zhang,
Ping Fan,
Xing-Min Cai
Affiliations
Fan Ye
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, and Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
Rui-Tuo Hong
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, and Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
Yi-Bin Qiu
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, and Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
Yi-Zhu Xie
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, and Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
Dong-Ping Zhang
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, and Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
Ping Fan
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, and Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
Xing-Min Cai
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, and Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
ZnSnN2 has potential applications in photocatalysis and photovoltaics. However, the difficulty in preparing nondegenerate ZnSnN2 hinders its device application. Here, the preparation of low-electron-density nanocrystalline ZnSnN2 and its device application are demonstrated. Nanocrystalline ZnSnN2 was prepared with reactive sputtering. Nanocrystalline ZnSnN2 with an electron density of approximately 1017 cm−3 can be obtained after annealing at 300 °C. Nanocrystalline ZnSnN2 is found to form Schottky contact with Ag. Both the current I vs. voltage V curves and the capacitance C vs. voltage V curves of these samples follow the related theories of crystalline semiconductors due to the limited long-range order provided by the crystallites with sizes of 2–10 nm. The I−V curves together with the nonlinear C−2−V curves imply that there are interface states at the Ag-nanocrystalline ZnSnN2 interface. The application of nanocrystalline ZnSnN2 to heterojunction solar cells is also demonstrated.
