Influence of 2 MeV electrons irradiation on gallium phosphide light-emitting diodes reverse currents

Abstract

Results of reverse electrophysical characteristics study of red and green LEDs, initial and irradiated with 2 MeV electrons were given. It was found that reverse current was predominantly caused by carriers tunneling at Urev ≤ 9 V, and by the avalanche multiplication at Urev ≥ 13 V, in the range U = 9 ÷ 13 V both mechanisms are available. Current increase at high voltage areas (Urev > 19 V) is limited by the base resistance of diode. In the case of significant reverse currents (I > 1 mA) irradiation of diodes leads to the shift of reverse current-voltage characteristics into the high voltages direction.

Keywords

• gallium phosphide
• GaP
• light-emitting diode
• irradiation
• electrons
• current-voltage characteristics
• reverse current
• breakdown