AIP Advances (Mar 2014)

Ferroelectric and photovoltaic properties of transition metal doped Pb(Zr0.14Ti0.56Ni0.30)O3-δ thin films

  • Shalini Kumari,
  • Nora Ortega,
  • Ashok Kumar,
  • J. F. Scott,
  • R. S. Katiyar

DOI
https://doi.org/10.1063/1.4868380
Journal volume & issue
Vol. 4, no. 3
pp. 037101 – 037101-11

Abstract

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We report nearly single phase Pb(Zr0.14Ti0.56Ni0.30)O3-δ (PZTNi30) ferroelectric having large remanent polarization (15–30 μC/cm2), 0.3–0.4 V open circuit voltage (VOC), reduced band gap (direct 3.4 eV, and indirect 2.9 eV), large ON and OFF photo current ratio, and the fast decay time. Reasonably good photo current density (1–5 μA/cm2) was obtained without gate bias voltage which significantly increased with large bias field. Ferroelectric polarization dictates the polarity of VOC and direction of short circuit current (ISC), a step forward towards the realization of noncentrosymmetric ferroelectric material sensitive to visible light.