Origin of variation of shift field via annealing at 400°C in a perpendicular-anisotropy magnetic tunnel junction with [Co/Pt]-multilayers based synthetic ferrimagnetic reference layer

H. Honjo; S. Ikeda; H. Sato; T. Watanebe; S. Miura; T. Nasuno; Y. Noguchi; M. Yasuhira; T. Tanigawa; H. Koike; M. Muraguchi; M. Niwa; K. Ito; H. Ohno; T. Endoh

doi:10.1063/1.4973946

AIP Advances (May 2017)

Origin of variation of shift field via annealing at 400°C in a perpendicular-anisotropy magnetic tunnel junction with [Co/Pt]-multilayers based synthetic ferrimagnetic reference layer

H. Honjo,
S. Ikeda,
H. Sato,
T. Watanebe,
S. Miura,
T. Nasuno,
Y. Noguchi,
M. Yasuhira,
T. Tanigawa,
H. Koike,
M. Muraguchi,
M. Niwa,
K. Ito,
H. Ohno,
T. Endoh

Affiliations

H. Honjo: Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai 980-0845, Japan
S. Ikeda: Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai 980-0845, Japan
H. Sato: Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai 980-0845, Japan
T. Watanebe: Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai 980-0845, Japan
S. Miura: Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai 980-0845, Japan
T. Nasuno: Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai 980-0845, Japan
Y. Noguchi: Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai 980-0845, Japan
M. Yasuhira: Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai 980-0845, Japan
T. Tanigawa: Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai 980-0845, Japan
H. Koike: Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai 980-0845, Japan
M. Muraguchi: Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai 980-0845, Japan
M. Niwa: Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai 980-0845, Japan
K. Ito: Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai 980-0845, Japan
H. Ohno: Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai 980-0845, Japan
T. Endoh: Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai 980-0845, Japan

DOI: https://doi.org/10.1063/1.4973946
Journal volume & issue: Vol. 7, no. 5
pp. 055913 – 055913-5

Abstract

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We investigated properties of perpendicular-anisotropy magnetic tunnel junctions (p-MTJs) with [Co/Pt]-multilayer based synthetic ferrimagnetic reference (SyF) layer at elevated annealing temperature Ta from 350°C to 400°C. Shift field HS defined as center field of minor resistance versus magnetic field curve of the MTJs increased with increase of Ta from 350°C to 400°C. The variation of HS is attributed to the variation of saturation magnetic moment in the SyF reference layer. Cross sectional energy dispersive X-ray spectroscopy analysis revealed that Fe element of CoFeB in the reference layer diffuses to Co/Pt multilayers in the SyF reference layer.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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