Origin of variation of shift field via annealing at 400°C in a perpendicular-anisotropy magnetic tunnel junction with [Co/Pt]-multilayers based synthetic ferrimagnetic reference layer
H. Honjo,
S. Ikeda,
H. Sato,
T. Watanebe,
S. Miura,
T. Nasuno,
Y. Noguchi,
M. Yasuhira,
T. Tanigawa,
H. Koike,
M. Muraguchi,
M. Niwa,
K. Ito,
H. Ohno,
T. Endoh
Affiliations
H. Honjo
Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai 980-0845, Japan
S. Ikeda
Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai 980-0845, Japan
H. Sato
Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai 980-0845, Japan
T. Watanebe
Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai 980-0845, Japan
S. Miura
Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai 980-0845, Japan
T. Nasuno
Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai 980-0845, Japan
Y. Noguchi
Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai 980-0845, Japan
M. Yasuhira
Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai 980-0845, Japan
T. Tanigawa
Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai 980-0845, Japan
H. Koike
Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai 980-0845, Japan
M. Muraguchi
Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai 980-0845, Japan
M. Niwa
Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai 980-0845, Japan
K. Ito
Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai 980-0845, Japan
H. Ohno
Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai 980-0845, Japan
T. Endoh
Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai 980-0845, Japan
We investigated properties of perpendicular-anisotropy magnetic tunnel junctions (p-MTJs) with [Co/Pt]-multilayer based synthetic ferrimagnetic reference (SyF) layer at elevated annealing temperature Ta from 350°C to 400°C. Shift field HS defined as center field of minor resistance versus magnetic field curve of the MTJs increased with increase of Ta from 350°C to 400°C. The variation of HS is attributed to the variation of saturation magnetic moment in the SyF reference layer. Cross sectional energy dispersive X-ray spectroscopy analysis revealed that Fe element of CoFeB in the reference layer diffuses to Co/Pt multilayers in the SyF reference layer.
