Nature Communications (Jan 2016)

Termination layer compensated tunnelling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropy

  • Jaewoo Jeong,
  • Yari Ferrante,
  • Sergey V. Faleev,
  • Mahesh G. Samant,
  • Claudia Felser,
  • Stuart S. P. Parkin

DOI
https://doi.org/10.1038/ncomms10276
Journal volume & issue
Vol. 7, no. 1
pp. 1 – 8

Abstract

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Heusler alloy thin films with a distorted tetragonal structure have potential spintronics applications given their bulk perpendicular magnetic anisotropy. Here, the authors demonstrate large perpendicular magnetic anisotropy in Mn3Ge thin films accompanied by negative tunnelling magnetoresistance.