Materials properties and device applications of semiconducting bismuth oxyselenide
Menglu Li,
Pei Chen,
Yan Zhao,
Mei Zhao,
Huaqian Leng,
Yong Wang,
Sharafat Ali,
Fazal Raziq,
Xiaoqiang Wu,
Jiabao Yi,
Haiyan Xiao,
Liang Qiao
Affiliations
Menglu Li
School of Physics University of Electronic Science and Technology of China Chengdu Sichuan the Pepole's Republic of China
Pei Chen
School of Physics University of Electronic Science and Technology of China Chengdu Sichuan the Pepole's Republic of China
Yan Zhao
School of Physics University of Electronic Science and Technology of China Chengdu Sichuan the Pepole's Republic of China
Mei Zhao
School of Physics University of Electronic Science and Technology of China Chengdu Sichuan the Pepole's Republic of China
Huaqian Leng
School of Physics University of Electronic Science and Technology of China Chengdu Sichuan the Pepole's Republic of China
Yong Wang
School of Physics University of Electronic Science and Technology of China Chengdu Sichuan the Pepole's Republic of China
Sharafat Ali
School of Physics University of Electronic Science and Technology of China Chengdu Sichuan the Pepole's Republic of China
Fazal Raziq
School of Physics University of Electronic Science and Technology of China Chengdu Sichuan the Pepole's Republic of China
Xiaoqiang Wu
Institute for Advanced Study, Chengdu University Chengdu the Pepole's Republic of China
Jiabao Yi
Global Innovative Centre for Advanced Nanomaterials, School of Engineering, College of Engineering, Science and Environment The University of Newcastle Callaghan New South Wales Australia
Haiyan Xiao
School of Physics University of Electronic Science and Technology of China Chengdu Sichuan the Pepole's Republic of China
Liang Qiao
School of Physics University of Electronic Science and Technology of China Chengdu Sichuan the Pepole's Republic of China
Abstract Layered two‐dimensional (2D) materials have garnered marvelous attention in diverse fields, including sensors, capacitors, nanocomposites and transistors, owing to their distinctive structural morphologies and superior physicochemical properties. Recently, layered quasi‐2D materials, especially layered bismuth oxyselenide (Bi2O2Se), are of particular interest, because of their different interlayer interactions from other layered 2D materials. On this basis, this material offers richer and more intriguing physics, including high electron mobility, sizeable bandgap, and remarkable thermal and chemical durability, rendering it an utterly prospective contender for use in advanced electronic and optoelectronic applications. Herein, this article reviews the recent advances related with Bi2O2Se. Initially, its structural characterization, band structure, and basic properties are briefly introduced. Further, the synthetic strategies for the preparation of Bi2O2Se are presented. Furthermore, the diverse applications of Bi2O2Se in the field of electronics and optoelectronics, photocatalytic, solar cells and sensing were summarized in detail. Ultimately, the challenges and future perspectives of Bi2O2Se are included.
