iScience (Mar 2022)

Growth of highly conducting MoS2-xNx thin films with enhanced 1T' phase by pulsed laser deposition and exploration of their nanogenerator application

  • Swati Parmar,
  • Neetu Prajesh,
  • Minal Wable,
  • Ram Janay Choudhary,
  • Suresh Gosavi,
  • Ramamoorthy Boomishankar,
  • Satishchandra Ogale

Journal volume & issue
Vol. 25, no. 3
p. 103898

Abstract

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Summary: High-quality growth of MoS2-xNx films is realized on single-crystal c-Al2O3 substrates by the pulsed laser deposition (PLD) in ammonia rendering highly stable and tunable 1Tʹ/2H biphasic constitution. Raman spectroscopy reveals systematic enhancement of 1Tʹ phase component due to the incorporation of covalently bonded N-doping in MoS2 lattice, inducing compressive strain. Interestingly, the film deposited at 300 mTorr NH3 shows ∼80% 1Tʹ phase. The transport measurements performed on MoS2-xNx films deposited at 300 mTorr NH3 display very low room temperature resistivity of 0.03 mΩ-cm which is 100 times enhanced over the undoped MoS2 grown under comparable conditions. A triboelectric nanogenerator (TENG) device containing biphasic MoS2-xNx film as an electron acceptor exhibits a clear enhancement in the output voltage as compared to the pristine MoS2. Device architecture, p-type N doping in MoS2 lattice, favorably increased work-function, multiphasic component of MoS2, and increased surface roughness synergistically contribute to superior TENG performance.

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