Growth of highly conducting MoS2-xNx thin films with enhanced 1T' phase by pulsed laser deposition and exploration of their nanogenerator application
Swati Parmar,
Neetu Prajesh,
Minal Wable,
Ram Janay Choudhary,
Suresh Gosavi,
Ramamoorthy Boomishankar,
Satishchandra Ogale
Affiliations
Swati Parmar
Department of Physics and Centre for Energy Science, Indian Institute of Science Education and Research (IISER), Pune, Maharashtra 411008, India
Neetu Prajesh
Department of Chemistry and Centre for Energy Science, Indian Institute of Science Education and Research (IISER), Pune, Maharashtra 411008, India
Minal Wable
Department of Physics and Centre for Energy Science, Indian Institute of Science Education and Research (IISER), Pune, Maharashtra 411008, India
Ram Janay Choudhary
UGC-DAE Consortium for Scientific Research, Indore 452001, India
Suresh Gosavi
Department of Physics, Savitribai Phule Pune University, Pune, Maharashtra 411007, India
Ramamoorthy Boomishankar
Department of Chemistry and Centre for Energy Science, Indian Institute of Science Education and Research (IISER), Pune, Maharashtra 411008, India; Corresponding author
Satishchandra Ogale
Department of Physics and Centre for Energy Science, Indian Institute of Science Education and Research (IISER), Pune, Maharashtra 411008, India; Research Institute for Sustainable Energy (RISE), TCG Centre for Research and Education in Science and Technology (TCG-CREST), Kolkata 700091, India; Corresponding author
Summary: High-quality growth of MoS2-xNx films is realized on single-crystal c-Al2O3 substrates by the pulsed laser deposition (PLD) in ammonia rendering highly stable and tunable 1Tʹ/2H biphasic constitution. Raman spectroscopy reveals systematic enhancement of 1Tʹ phase component due to the incorporation of covalently bonded N-doping in MoS2 lattice, inducing compressive strain. Interestingly, the film deposited at 300 mTorr NH3 shows ∼80% 1Tʹ phase. The transport measurements performed on MoS2-xNx films deposited at 300 mTorr NH3 display very low room temperature resistivity of 0.03 mΩ-cm which is 100 times enhanced over the undoped MoS2 grown under comparable conditions. A triboelectric nanogenerator (TENG) device containing biphasic MoS2-xNx film as an electron acceptor exhibits a clear enhancement in the output voltage as compared to the pristine MoS2. Device architecture, p-type N doping in MoS2 lattice, favorably increased work-function, multiphasic component of MoS2, and increased surface roughness synergistically contribute to superior TENG performance.
