npj Spintronics (Aug 2024)

Anisotropic magnetoresistance in altermagnetic MnTe

  • Ruben Dario Gonzalez Betancourt,
  • Jan Zubáč,
  • Kevin Geishendorf,
  • Philipp Ritzinger,
  • Barbora Růžičková,
  • Tommy Kotte,
  • Jakub Železný,
  • Kamil Olejník,
  • Gunther Springholz,
  • Bernd Büchner,
  • Andy Thomas,
  • Karel Výborný,
  • Tomas Jungwirth,
  • Helena Reichlová,
  • Dominik Kriegner

DOI
https://doi.org/10.1038/s44306-024-00046-z
Journal volume & issue
Vol. 2, no. 1
pp. 1 – 9

Abstract

Read online

Abstract Recently, MnTe was established as an altermagnetic material that hosts spin-polarized electronic bands as well as anomalous transport effects like the anomalous Hall effect. In addition to these effects arising from altermagnetism, MnTe also hosts other magnetoresistance effects. Here, we study the manipulation of the magnetic order by an applied magnetic field and its impact on the electrical resistivity. In particular, we establish which components of anisotropic magnetoresistance are present when the magnetic order is rotated within the hexagonal basal plane. Our experimental results, which are in agreement with our symmetry analysis of the magnetotransport components, showcase the existence of an anisotropic magnetoresistance linked to both the relative orientation of current and magnetic order, as well as crystal and magnetic order. Altermagnetism is manifested as a three-fold component in the transverse magnetoresistance which arises due to the anomalous Hall effect.